Samsung First to Ship Advanced 16-Gb DDR3 Modules

Delivers 18 configurations of its high-density, high-performance DDR3-based modules

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, has announced that it has just made the initial shipment of the world's first and smallest high-density memory modules based on 2-gigabit (Gb), 50 nanometer (nm)-class DDR3.
Samsung is shipping 18 configurations of its high-density, high-performance DDR3-based modules, which are designed for servers. They include a 16-gigabyte (GB) registered inline memory module (RIMM) and an 8GB RDIMM (registered dual inline memory module). Last September, 50nm-class 2Gb DDR3 was introduced for PC applications.
The 16GB high density module operates at 1066 Megabits per second (Mbps), which allows 192GB of total memory density for a 2-socket CPU server system. Samsung also is the first to offer 16GB RDIMMs operating at 1.35 volts, providing around 20 percent savings in power consumption over 1.5V DDR3 solutions.
In addition, the 16GB RDIMM features a dual-die package configuration, which is more efficient in cost and performance over the widely discussed quad-die configuration.
The 2Gb DDR3 consumes at least 40 percent less power than 1Gb configurations, supporting strong industry demand for lower power consumption, which is particularly important with server systems, as well as the new generation of notebooks.
According to market research firm IDC, the global DDR3 market is expected to reach 29 percent of the total DRAM market in 2009 and increase to 75 percent in 2011 (estimated in 1Gb equivalent units). Also, 2Gb DDR3 devices are forecast to take 3 percent of the total DDR3 market in 2009, with their share growing to 33 percent in 2011.
Samsung Brings 40-nm Technology to Production of Advanced Fusion Memory Chip
Samsung Electronics Co., Ltd. has announced that it has begun using 40-nanometer (nm) process technology to produce an eight-gigabit (Gb) Flex-OneNAND¢ā fusion memory chip. Samsung's Flex-OneNAND is a proprietary memory device that provides both SLC and MLC NAND in a single cost-efficient chip. It has been designed for applications that require high speed and high reliability in processing both code and data content.
Applications using Flex-OneNAND are expected to expand from high-performance smart phones today, to full HDTVs, IPTVs and other high-end applications by year end.
"The 40-nm Flex-OneNAND is a tremendous advancement for the memory industry, one which offers a uniquely cost-effective approach to memory selection, while permitting designers the flexibility of adjusting designs up to the final design stage," said Jim Elliott, memory vice president, Samsung Semiconductor, Inc.
By adopting advanced 40nm class technology, Samsung achieves an increase in productivity of up to 180 percent over the first Flex-OneNAND, a 4Gb device designed on 60nm-class technology.
Developed in 2007, Flex-OneNAND incorporates SLC and MLC NAND on a single piece of silicon, allowing application designers to choose the portion of SLC and MLC NAND storage to be used in any particular design through a simple adjustment to the accompanying software. This maximizes the performance and efficiency of the embedded flash chip.
Samsung has included software to support a system level interface for embedded memory, moviNAND¢ā (or eMMC) in its 8Gb Flex-OneNAND. This new feature allows handset designers to easily introduce high-density embedded memory in their next generation phones, eliminating the need to source additional software. As embedded memory can increase high data transfer speeds, more high-end phones are expected to be introduced with from 1GB to even 32GB of embedded memory.
Flex-OneNAND's MLC area provides up to a three times greater read speed and its SLC area offers up to a four times greater read speed than regular MLC NAND. The Flex-OneNAND MLC area features a comparable write speed to regular MLC NAND and its SLC area provides a write speed up to three times higher.
Flex-OneNAND reduces the area needed for the memory on the printed circuit board and improves performance by diminishing transmission noise.
Samsung also said it is expanding its collaboration with chipset designers to provide OEMs with added convenience in implementing innovative memory solutions such as Flex-OneNAND. nw

The world's first and smallest high-density memory modules based on 2-Gb, 50 nm-class DDR3.


Copyright(c) 2003 Newsworld All rights reserved. news@newsworld.co.kr
3Fl, 292-47, Shindang 6-dong, Chung-gu, Seoul, Korea 100-456
Tel : 82-2-2235-6114 / Fax : 82-2-2235-0799